Now showing items 1-4 of 4
| Abstract: | The dielectric properties of vacuum-deposited europium oxide films have been investigated in the frequency range from 1 kHz to 1 MHz at various temperatures (300-543 K). The dielectric constant is found to depend on film thickness and it attains a constant value beyond 1000 Å. Films deposited at higher substrate temperatures (above 423 K) exhibit improved dielectric properties owing to the recovery of stoichiometry. The frequency variation of the loss factor exhibits a minimum which increases with rise in temperature. The breakdown field strength (about 106V cm-1) is found to be thickness dependent and it varies in accordance with the Forlani-Minnaja relation. The films exhibit ohmic conduction with an activation energy of 0.86 eV at low electric fields but at higher fields the conductivity becomes space charge limited. X-ray studies show that the films are amorphous in nature. The a.c. conductivity is proportional to ω at low frequency, whereas a square law dependence is observed at higher frequencies. The optical constants n, α and k and optical band gap are calculated from the UV-visible-near-IR spectra. |
| URI: | http://dyuthi.cusat.ac.in/purl/2652 |
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| Dyuthi-T0334.pdf | (403.4Kb) |
| Abstract: | In the present study the preparation and characterisation of rubber ferrite composites (RFC) containing barium ferrite (BaF) and strontium ferrite (SrF) have been dealt with. The incorporation of the hard ferrites into natural and nitrile rubber was carried out according to a specific recipe for various loadings of magnetic fillers. For this, the ferrite materials namely barium ferrite and strontium ferrite having the general formula MO6Fe2O3 have been prepared by the conventional ceramic techniques. After characterisation they were incorporated into the natural and nitrile rubber matrix by mechanical method. Carbon black was also incorporated at different loading into the rubber ferrite composites to study its effect on various properties. The cure characteristics, mechanical, dielectric and magnetic properties of these composites were evaluated. The ac electrical conductivity of both the ceramic ferrites and rubber ferrite composites were also calculated using a simple relation. The investigations revealed that the rubber ferrite composites with the required dielectric and magnetic properties can be obtained by the incorporation of ferrite fillers into the rubber matrix, without compromising much on the processability and mechanical properties. |
| Description: | Department of Polymer Science and Rubber Technology, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/2338 |
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| Dyuthi-T0612.pdf | (5.013Mb) |
| Abstract: | The semiconductor industry's urge towards faster, smaller and cheaper integrated circuits has lead the industry to smaller node devices. The integrated circuits that are now under volume production belong to 22 nm and 14 nm technology nodes. In 2007 the 45 nm technology came with the revolutionary high- /metal gate structure. 22 nm technology utilizes fully depleted tri-gate transistor structure. The 14 nm technology is a continuation of the 22 nm technology. Intel is using second generation tri-gate technology in 14 nm devices. After 14 nm, the semiconductor industry is expected to continue the scaling with 10 nm devices followed by 7 nm. Recently, IBM has announced successful production of 7 nm node test chips. This is the fashion how nanoelectronics industry is proceeding with its scaling trend. For the present node of technologies selective deposition and selective removal of the materials are required. Atomic layer deposition and the atomic layer etching are the respective techniques used for selective deposition and selective removal. Atomic layer deposition still remains as a futuristic manufacturing approach that deposits materials and lms in exact places. In addition to the nano/microelectronics industry, ALD is also widening its application areas and acceptance. The usage of ALD equipments in industry exhibits a diversi cation trend. With this trend, large area, batch processing, particle ALD and plasma enhanced like ALD equipments are becoming prominent in industrial applications. In this work, the development of an atomic layer deposition tool with microwave plasma capability is described, which is a ordable even for lightly funded research labs. |
| URI: | http://dyuthi.cusat.ac.in/purl/5101 |
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| Dyuthi-T 2167 .pdf | (21.87Mb) |
| Abstract: | The thesis deals with the preparation and dielectric characterization of Poly aniline and its analogues in ISM band frequency of 2-4 GHz that includes part of the microwave region (300 MHz to 300 GHz) of the electromagnetic spectrum and an initial dielectric study in the high frequency [O.05MHz-13 MHz]. PolyaniIine has been synthesized by an in situ doping reaction under different temperature and in the presence of inorganic dopants such as HCl H2S04, HN03, HCl04 and organic dopants such as camphorsulphonic acid [CSA], toluenesulphonic acid {TSA) and naphthalenesulphonic acid [NSA]. The variation in dielectric properties with change in reaction temperature, dopants and frequency has been studied. The effect of codopants and microemulsions on the dielectric properties has also been studied in the ISM band. The ISM band of frequencies (2-4 GHz) is of great utility in Industrial, Scientific and Medical (ISM) applications. Microwave heating is a very efficient method of heating dielectric materials and is extensively used in industrial as well as household heating applications. |
| Description: | Department of Polymer Science and Rubber Technology,Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/2209 |
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| Dyuthi-T0564.pdf | (8.942Mb) |
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