Now showing items 21-27 of 27
| Abstract: | Optical emission spectroscopic studies were carried out on the plasma produced by ablation of zinc oxide target using the third harmonic 355 nm of Q-switched Nd:YAG laser, in vacuum and at three different ambient gas oxygen pressures. The spatial variations of electron density Ne and electron temperature Te were studied up to a distance of 20 mm from the target surface. The kinematics of the emitted particles and the expansion of the plume edge are discussed. The optimum conditions favorable for the formation of high quality zinc oxide thin films are thereby suggested. |
| URI: | http://dyuthi.cusat.ac.in/purl/787 |
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| Optical emissio ... ated zinc oxide plasma.pdf | (95.83Kb) |
| Abstract: | There is an increasing demand for renewable energies due to the limited availability of fossil and nuclear fuels and due to growing environmental problems. Photovoltaic (PV) energy conversion has the potential to contribute significantly to the electrical energy generation in the future. Currently, the cost for photovoltaic systems is one of the main obstacles preventing production and application on a large scale. The photovoltaic research is now focused on the development of materials that will allow mass production without compromising on the conversion efficiencies. Among important selection criteria of PV material and in particular for thin films, are a suitable band gap, high absorption coefficient and reproducible deposition processes capable of large-volume and low cost production. The chalcopyrite semiconductor thin films such as Copper indium selenide and Copper indium sulphide are the materials that are being intensively investigated for lowering the cost of solar cells. Conversion efficiencies of 19 % have been reported for laboratory scale solar cell based on CuInSe2 and its alloys. The main objective of this thesis work is to optimise the growth conditions of materials suitable for the fabrication of solar cell, employing cost effective techniques. A typical heterojunction thin film solar cell consists of an absorber layer, buffer layer and transparent conducting contacts. The most appropriate techniques have been used for depositing these different layers, viz; chemical bath deposition for the window layer, flash evaporation and two-stage process for the absorber layer, and RF magnetron sputtering for the transparent conducting layer. Low cost experimental setups were fabricated for selenisation and sulphurisation experiments, and the magnetron gun for the RF sputtering was indigenously fabricated. The films thus grown were characterised using different tools. A powder X-ray diffractometer was used to analyse the crystalline nature of the films. The energy dispersive X-ray analysis (EDX) and scanning electron microscopy i (SEM) were used for evaluating the composition and morphology of the films. Optical properties were investigated using the UV-Vis-NIR spectrophotometer by recording the transmission/absorption spectra. The electrical properties were studied using the two probe and four probe electrical measurements. Nature of conductivity of the films was determined by thermoprobe and thermopower measurements. The deposition conditions and the process parameters were optimised based on these characterisations. |
| URI: | http://dyuthi.cusat.ac.in/purl/665 |
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| Dyuthi-T0547.pdf | (3.353Mb) |
| URI: | http://dyuthi.cusat.ac.in/purl/764 |
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| ApplPhysLett_88_212103.pdf | (165.1Kb) |
| URI: | http://dyuthi.cusat.ac.in/purl/788 |
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| Pulsed laser de ... pe _-AgGaO2 thin films.pdf | (785.6Kb) |
| Abstract: | The method of preparation of ZnS phosphors doped with praseodymium and copper is given. The electroluminescence (EL) spectrum of ZnS:Pr,Cl has two broad bands at 470 and 570 nm. ZnS:Cu,Pr,Cl gives white emission with spectral peaks at 470, 520, 570 and 640 nm. The EL spectra of both types of phosphor exhibit a conspicuous colour shift as the frequency of the excitation voltage is varied. Detailed investigations show that the relative intensities of spectral peaks are strongly dependent on the frequency of the excitation voltage. The colour shift is explained on the basis of the Schon-Klasens model. |
| URI: | http://dyuthi.cusat.ac.in/purl/2428 |
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| Dyuthi-P0288.pdf | (472.0Kb) |
| Abstract: | Stable, OH free zinc oxide (ZnO) nanoparticles were synthesized by hydrothermal method by varying the growth temperature and concentration of the precursors. The formation of ZnO nanoparticles were confirmed by x-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED) studies. The average particle size have been found to be about 7-24 nm and the compositional analysis is done with inductively coupled plasma atomic emission spectroscopy (ICP-AES). Diffuse reflectance spectroscopy (DRS) results shows that the band gap of ZnO nanoparticles is blue shifted with decrease in particle size. Photoluminescence properties of ZnO nanoparticles at room temperature were studied and the green photoluminescent emission from ZnO nanoparticles can originate from the oxygen vacancy or ZnO interstitial related defects. |
| URI: | http://dyuthi.cusat.ac.in/purl/790 |
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| Synthesis of Zn ... by hydrothermal method.pdf | (1.906Mb) |
| Abstract: | Transparent diode heterojunction on ITO coated glass substrates was fabricated using p-type AgCoO2 and n-type ZnO films by pulsed laser deposition (PLD). The PLD of AgCoO2 thin films was carried out using the pelletized sintered target of AgCoO2 powder, which was synthesized in-house by the hydrothermal process. The band gap of these thin films was found to be ~3.89 eV and they had transmission of~55% in the visible spectral region. Although Hall measurements could only indicate mixed carrier type conduction but thermoelectric power measurements of Seebeck coefficient confirmed the p-type conductivity of the grown AgCoO2 films. The PLD grown ZnO films showed a band gap of ~3.28 eV, an average optical transmission of ~85% and n-type carrier density of~4.6×1019 cm− 3. The junction between p-AgCoO2 and n-ZnO was found to be rectifying. The ratio of forward current to the reverse current was about 7 at 1.5 V. The diode ideality factor was much greater than 2. |
| URI: | http://dyuthi.cusat.ac.in/purl/791 |
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| Synthesis of Zn ... by hydrothermal method.pdf | (1.906Mb) |
Now showing items 21-27 of 27
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